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Guided self-assembly of metallic nanowires and channels B. Erdem Alaca,a)
 

Summary: Guided self-assembly of metallic nanowires and channels
B. Erdem Alaca,a)
Huseyin Sehitoglu,b)
and Taher Saif
Department of Mechanical and Industrial Engineering, University of Illinois, 1206 West Green Street,
Urbana, Illinois 61801
Received 26 January 2004; accepted 13 April 2004; published online 19 May 2004
A method is presented to form metallic nanowires and nanochannels by guided self-assembly. The
method relies on an initial plasma-enhanced chemical vapor deposition of a silicon oxide film with
altered chemistry on a silicon wafer, and the cracking of the film due to tensile stresses upon
annealing. The fabricated stress concentration features on the Si substrate control the number of
cracks and their orientation. These cracks are then filled with electroless nickel, and the subsequent
removal of SiO2 produces a controlled network of nanowires of about 100 nm in dimension. In
addition to nanowires, nanobridges, and nanocantilevers have also been fabricated by releasing the
wires, confirming that the resulting structures are rather robust. 2004 American Institute of
Physics. DOI: 10.1063/1.1759781
An exciting challenge in the field of nanotechnology is
the synthesis of nanostructures, such as nanowires, in a cost
effective manner. Currently, there are two general approaches
to fabricating nanowires. In the top-down approach, highly

  

Source: Alaca, B. Erdem - Department of Mechanical Engineering, Koc University

 

Collections: Engineering