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Exchange bias in nanoscale antidot arrays D. Tripathy,1
 

Summary: Exchange bias in nanoscale antidot arrays
D. Tripathy,1
A. O. Adeyeye,1,a
and N. Singh2
1
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National
University of Singapore, Singapore 117576, Singapore
2
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685,
Singapore
Received 5 May 2008; accepted 27 June 2008; published online 15 July 2008
Exchange bias effects have been systematically investigated in nanoscale Cu 10 nm /Ni80Fe20
30 nm /Ir75Mn25 30 nm /Cu 2 nm multilayer antidot arrays. The antidot arrays exhibit
asymmetric and shifted hysteresis loops along the induced exchange bias direction, with higher
coercivity and exchange bias field values as compared to a continuous film deposited under identical
conditions. The evolution in exchange bias field with increasing antidot diameter is ascribed
to the constraints imposed on the domain size in the Ir75Mn25 layer and reduced
ferromagnetic-ferromagnetic interactions in the Ni80Fe20 layer. 2008 American Institute of
Physics. DOI: 10.1063/1.2959727
The development of advanced lithography tools for fab-

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science