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Anisotropic domain evolution in epitaxial Fe/GaAs,,001... wires U. Ebels,* A. O. Adeyeye, M. Gester,

Summary: Anisotropic domain evolution in epitaxial Fe/GaAs,,001... wires
U. Ebels,* A. O. Adeyeye, M. Gester,
R. P. Cowburn, C. Daboo, and J. A. C. Bland
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 OHE, United Kingdom
Received 24 January 1997
The magnetization reversal in in-plane magnetized epitaxial Fe/GaAs 001 wire elements with dimensions
of 15 m width w) 500 m length l) 300 Thickness t) has been studied by scanning Kerr microscopy
and Kerr magnetometry. The two-jump switching process is observed which is characteristic for the magne-
tization reversal in continuous epitaxial Fe 001 films with fourfold in-plane anisotropy. However, in contrast
to the continuous film, the domain nucleation and growth processes which mediate the irreversible magneti-
zation jumps at the two critical fields, Hc1 and Hc2 are found to be determined by the orientation of the applied
field with respect to the long and the short wire axis. This anisotropy in the domain evolution is a result of the
combined effects of local edge dipolar fields, the fourfold magnetocrystalline anisotropy as well as the finite
and anisotropic lateral extensions of the wires. Due to the large aspect ratio of l/w, the boundaries of the long
and short wire edges restrict the domain expansion differently. Consequently, this ``shape'' anisotropy in the
domain evolution contrasts with the conventional shape anisotropy associated with macroscopic average
demagnetization fields. S0163-1829 97 04334-8
Low-dimensional magnetism has been of central interest
in the past decade stimulated by the discovery of phenomena


Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore


Collections: Physics; Materials Science