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Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates D.J. As a,*, S. Potthast a

Summary: Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates
D.J. As a,*, S. Potthast a
, J. Fernandez a
, K. Lischka a
, H. Nagasawa b
, M. Abe b
University of Paderborn, Department of Physics, Warburger Strasse 100, D-33095 Paderborn, Germany
HOYA Advanced Semiconductor Technologies Co., Ltd., 1-17-16 Tanashioda, Sagamihara, Kanagawa 229-1125, Japan
Available online 18 November 2005
In this work, we focus on the fabrication of cubic GaN based Schottky-barrier devices (SBDs) and measured current voltage (I­V)
characteristics and the critical field for electronic breakdown. Phase-pure cubic GaN and c-AlxGa1 Ā xN/GaN structures were grown by
plasma assisted molecular beam epitaxy (MBE) on 200 lm thick free-standing 3C-SiC (100) substrates, which were produced by HOYA
Advanced Semiconductor Technologies Co., Ltd. The thickness of the c-GaN and c-Al0.3Ga0.7N epilayers were about 600 and 30 nm,
respectively. Ni/In Schottky contacts 300 lm in diameter were produced on c-GaN and c-Al0.3Ga0.7N/GaN structures by thermal evap-
oration using contact lithography. A clear rectifying behavior was measured in our SBDs and the I­V behavior was analyzed in detail,
indicating the formation of a thin surface barrier at the Ni­GaN interface. Annealing of the Ni Schottky contacts in air at 200 °C reduces
the leakage current by three orders of magnitude. The doping density dependence of breakdown voltages derived from the reverse break-


Source: As, Donat Josef - Department Physik, Universität Paderborn


Collections: Materials Science; Physics