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Long room-temperature electron spin lifetimes in highly doped cubic GaN J. H. Bu,1
 

Summary: Long room-temperature electron spin lifetimes in highly doped cubic GaN
J. H. Buß,1
J. Rudolph,1,a
T. Schupp,2
D. J. As,2
K. Lischka,2
and D. Hägele1
1
Arbeitsgruppe Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Universitätsstraße 150,
D-44780 Bochum, Germany
2
Department of Physics, University of Paderborn, Warburger Str. 100, D-33095 Paderborn, Germany
Received 22 June 2010; accepted 23 July 2010; published online 9 August 2010
We report on very long electron spin relaxation times in highly n-doped bulk zincblende GaN
exceeding 500 ps up to room-temperature. Time-resolved Kerr-rotation measurements show an
almost temperature independent spin relaxation time between 80 and 295 K confirming an early
prediction of Dyakonov and Perel for a degenerate electron gas. © 2010 American Institute of
Physics. doi:10.1063/1.3478838
The vision of spin-based semiconductor electronics has
stimulated intense research in the field of spintronics.1

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics