Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
FULLY SINGLE CRYSTAL SILICON RESONATORS WITH DEEP-SUBMICRON DRY-ETCHED TRANSDUCER GAPS
 

Summary: FULLY SINGLE CRYSTAL SILICON RESONATORS WITH DEEP-SUBMICRON DRY-ETCHED
TRANSDUCER GAPS
Siavash Pourkamali and Farrokh Ayazi
School of Electrical and Computer Engineering
Georgia Institute of Technology, Atlanta, GA 30332-0250, USA
Email: siavash@ece.gatech.edu; Tel: 1-404-385-4306; Fax: 1-404-894-5028
ABSTRACT
This paper reports on fully single crystal silicon (SCS)
micromechanical resonators with deep-submicron vertical
capacitive gaps. The microresonators are fabricated on low
resistivity silicon-on-insulator (SOI) substrates and have SCS
resonating structure and transducers. The deep-submicron
high aspect-ratio transducer gaps are created through a novel
processing technique that uses low-cost micron-resolution
optical lithography. The mask features defining the width of
the transducer gaps are created in a self-aligned manner by
the thickness of a deposited sacrificial polysilicon layer, and
the gaps are dry-etched using the Bosch process. High
aspect ratio (~20:1) trenches with width as small as 130nm
have been obtained using the Bosch process. Single crystal

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering