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Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer
 

Summary: Doping by metal-mediated epitaxy: Growth of As delta-doped Si
through a Pb monolayer
O. D. Dubon,a)
P. G. Evans,b)
J. F. Chervinsky, M. J. Aziz, F. Spaepen,
and J. A. Golovchenkoc)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
M. F. Chisholm
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
D. A. Muller
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
Received 20 October 2000; accepted for publication 5 January 2001
In molecular-beam epitaxy a monolayer of Pb on the Si 111 surface induces single-crystal growth
at temperatures well below those required for similar growth on a bare surface. We demonstrate that
the suppression of dopant segregation at the lower temperatures attainable by Pb-mediated growth
allows the incorporation of As donors at concentrations reaching a few atomic percent. When Pb
and Si are deposited on an As-terminated Si 111 substrate at 350 °C, the Pb segregates to the
surface without doping the Si film while the As is buried within nanometers of the substrate­film
interface. The resulting concentration of electrically active As, 1.8 1021
cm 3

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science