Summary: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 10, NO. 4, JULY/AUGUST 2004 759
ITO-Schottky Photodiodes for High-Performance
Detection in the UV­IR Spectrum
Necmi Biyikli, Student Member, IEEE, Ibrahim Kimukin, Student Member, IEEE,
Bayram Butun, Student Member, IEEE, Orhan Aytür, Senior Member, IEEE, and Ekmel Ozbay, Member, IEEE
Abstract--High-performance vertically illuminated Schottky
photodiodes with indium­tin­oxide (ITO) Schottky layers were
designed, fabricated, and tested. Ternary and quarternary III-V
material systems (AlGaN­GaN, AlGaAs­GaAs, InAlGaAs­InP,
and InGaAsP­InP) were utilized for detection in the ultravi-
olet (UV) ( 400 nm), near-IR ( 850 nm), and IR
( 1550 nm) spectrum. The material properties of thin
ITO films were characterized. Using resonant-cavity-enhanced
(RCE) detector structures, improved efficiency performance was
achieved. Current­voltage, spectral responsivity, and high-speed
measurements were carried out on the fabricated ITO-Schottky
devices. The device performances obtained with different material
systems are compared.
Index Terms--Heterostructure, high performance, III­V alloys,
indium­tin­oxide (ITO), photodiode, resonant cavity, Schottky.

Source: Aytur, Orhan - Department of Electrical Engineering, Bilkent University
Ozbay, Ekmel - Department of Electrical and Rlectronics Engineering & Physics, Bilkent University

Collections: Engineering; Materials Science; Physics