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High-speed GaAs-based resonant-cavity-enhanced 1.3 m photodetector Ibrahim Kimukina)

Summary: High-speed GaAs-based resonant-cavity-enhanced 1.3 m photodetector
Ibrahim Kimukina)
and Ekmel Ozbay
Department of Physics, Bilkent University, Ankara 06533, Turkey
Necmi Biyikli, Tolga Kartaloglu, and Orhan Aytu¨r
Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06533, Turkey
Selim Unlu
Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215
Gary Tuttle
Microelectronics Research Center, Iowa State University, Ames, Iowa 50011
Received 9 August 2000; accepted for publication 2 October 2000
We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal
photoemission photodiodes operating at 1.3 m. The devices were fabricated by using a
microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 m and a
nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental
setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000
American Institute of Physics. S0003-6951 00 00149-2
High-speed infrared photodetectors are becoming in-
creasingly important for optical communication, signal pro-
cessing, infrared imaging, and measurement systems.


Source: Aytur, Orhan - Department of Electrical Engineering, Bilkent University


Collections: Engineering