Summary: Photoemission studies on heterostructure bipolar transistors
Fritz Schuermeyera,
*, Peter J. Zampardib
, Peter M. Asbeckc
a
Air Force Research Laboratory, AFRL/SNDD, Wright Patterson AFB, Dayton, OH 45433-7322, USA
b
Rockwell Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360, USA
c
University of California, San Diego, Department of ECE 0407, 9500 Gilman Dr, La Jolla, CA 92093, USA
Abstract
We apply in-situ photoemission techniques to characterize the band pro®le in heterostructure bipolar transistors.
The measurements are performed on-wafer on fully fabricated InP based HBTs at room temperature. We
demonstrate that this technique is sensitive to detect and analyze barriers between emitter and base as well as
between base and collector. Furthermore, the photoresponse provides information on the doping characteristics of
the active layers. Published by Elsevier Science Ltd.
1. Introduction
Heterostructure bipolar transistors (HBTs) are being
developed for applications where speed, power, e-
ciency, and low noise are of importance. These transis-

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

Collections: Engineering