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Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy
 

Summary: Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate
by Molecular Beam Epitaxy
D. J. As, U. Köhler, and K. Lischka,
Universität Paderborn, FB-6 Physik, Warburger Strasse 100, D-33095 Paderborn, Germany,
d.as@uni-paderborn.de
ABSTRACT
The optical properties of Carbon doped cubic GaN epilayers have been investigated by
temperature and intensity dependent photoluminescence measurements. RF-plasma assisted
molecular beam epitaxy equipped with an e-beam-evaporation source for carbon doping is used
to grow the cubic GaN layers on GaAs (001) substrates. With increasing Carbon flux a new
photoluminescence line at 3.08 eV appeared at 2K. This line is attributed to a donor acceptor
transistion, which involves the shallow CN acceptor. From the spectral position the binding
energy of the C acceptor is estimated to be about EC = 0.215 eV. Our experiments demonstrate
that C indeed introduces a shallow acceptor in cubic GaN with an acceptor binding energy, which
is about 15 meV lower than that observed for the Mg acceptor in cubic GaN. However, at high C
fluxes a deep red luminescence band appeared at 2.1 eV, indicating compensation effects.
INTRODUCTION
For advanced optoelectronic and electronic devices, like light emitting diodes (LEDs), or laser
diodes (LDs) controlled p-type doping and high hole conductivity is crucial [1]. Up to now,
Magnesium is used as standard dopant in Molecular Beam Epitaxy (MBE) as well as

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics