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Activation volume for boron diffusion in silicon and implications for strained films
 

Summary: Activation volume for boron diffusion in silicon and implications
for strained films
Yuechao Zhao and Michael J. Aziza)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Hans-J. Gossmann
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
Salman Mitha
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, California 94063
David Schiferl
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Received 2 September 1998; accepted for publication 28 October 1998
The diffusivity of B in Si is enhanced by pressure, characterized by an activation volume of V*
0.17 0.01 times the atomic volume; V* is close to the formation volume of the self-interstitial
determined by atomistic calculations. The results for hydrostatic pressure are used to make
predictions for the effect of biaxial strain on diffusion. Assuming an interstitial-based mechanism
and a range of values for the anisotropy in the migration volume, comparison is made between our
results, the atomistic calculations, and the measured dependence of B diffusion on biaxial strain. We
find a qualitative consistency for an interstitial-based mechanism with the measured strain effect on
diffusion in Si­Ge alloys, but not with the measured strain effect in pure Si. Experiments and
calculations to determine the origin of this discrepancy are discussed. © 1999 American Institute

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science