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Pt-coated InN nanorods for selective detection of hydrogen at room temperature
 

Summary: Pt-coated InN nanorods for selective detection of hydrogen at room
temperature
O. Kryliouk, H. J. Park, H. T. Wang, B. S. Kang, T. J. Anderson, and F. Ren
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
S. J. Peartona
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
Received 20 May 2005; accepted 27 June 2005; published 15 August 2005
Single crystal InN nanorods were successfully grown on c-Al2O3 by hydride-metalorganic vapor
phase epitaxy. The measured resistance of bare InN nanorods does not change upon exposure to
hydrogen ambient. The addition of sputter-deposited clusters of Pt onto the surface of the InN
nanorods, however, produced a significant change in the measured room temperature resistance. The
measured resistance changed systematically by 0.5%12% as the ambient hydrogen concentration in
N2 was varied between 10 and 250 ppm after 15 min exposure time. Importantly, a relatively low
power consumption of 0.3 mW was measured under these conditions. There was no response at
room temperature to O2, N2O, or NH3 exposures. 2005 American Vacuum Society.
DOI: 10.1116/1.2008268
I. INTRODUCTION
The growth of one-dimensional semiconductors such as
nanowires and nanorods has become a subject of intensive
research.16

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science