Summary: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+
implanted 3C­SiC ,,001...
E. Tschumak,1,a
R. Granzner,2
J. K. N. Lindner,1
F. Schwierz,2
K. Lischka,1
H. Nagasawa,3
M. Abe,3
and D. J. As1
1
Department of Physics, Faculty of Science, University of Paderborn, Warburger Str. 100,
D-33098 Paderborn, Germany
2
FG Festkörperelektronik, TU Ilmenau, Postfach 100565, D-98684 Ilmenau, Germany
3
SiC Development Center, HOYA Corporation, 1-17-16 Tanashioda, Sagamihara,
Kanagawa 252-0425, Japan
Received 5 November 2009; accepted 27 May 2010; published online 21 June 2010
A heterojunction field-effect transistor HFET was fabricated of nonpolar cubic AlGaN/GaN grown

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics