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Swing effects in alternating phase shift mask lithography: Implications of low illumination
 

Summary: Swing effects in alternating phase shift mask lithography: Implications
of low illumination
Navab Singh,a
H. Q. Sun, W. H. Foo, S. S. Mehta, and R. Kumar
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park-II, Singapore 117685,
Singapore
A. O. Adeyeye
Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore
117576, Singapore
H. Suda, T. Kubota, Y. Kimura, and H. Kinoshita
HOYA Corporation, Mask Division, 1375 Kawaguchi-Cho, Hachioji-Shi, Tokyo 193-8525, Japan
Received 5 January 2006; accepted 16 August 2006; published 20 September 2006
We develop sub-100-nm resist patterns with alternating phase shift mask alt PSM using 0.68
numerical aperture KrF lithography scanner at a partial coherence factor of 0.31, the lowest
available in our tool--a need of alt PSM technique. Although we achieve resist lines down to 65 nm,
the standing wave and critical dimension CD swing effects are immense on big patterns. The
180 nm lines show CD swings two times to that of 90 nm lines. The sidewall profiles of 180 nm
lines are also more susceptible to swing inflection point selection than 90 nm lines. The finding on
the use of alt PSM is that the higher standing wave, larger CD swing, and more degradation of
sidewall profiles on big patterns than small patterns are the implications of low illumination. We

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science