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Mechanism of current leakage in Ni Schottky diodes on cubic GaN and AlxGa1-xN , S. Potthast1
 

Summary: Mechanism of current leakage in Ni Schottky diodes on cubic GaN and AlxGa1-xN
epilayers
D.J. As1
, S. Potthast1
, J. Fernandez1
, K. Lischka1
, H. Nagasawa2
, M. Abe2
1
University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn,
Germany;
2
HOYA Advanced Semiconductor Technologies Co., Ltd., 1-17-16 Tanashioda, Sagamihara,
Kanagawa 229-1125, Japan
ABSTRACT
Ni Schottky-diodes (SDs) 300 µm in diameter were fabricated by thermal evaporation using
contact lithography on cubic GaN and AlxGa1-xN epilayers. Phase-pure cubic GaN and
c-Al0.3Ga0.7N/GaN structures were grown by plasma assisted molecular beam epitaxy (MBE) on
200 µm thick free-standing 3C-SiC (100) substrates. The quality of the cubic group III-nitride
epilayers was checked by high resolution X-ray diffractometry, atomic force microscopy and

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics