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In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic
 

Summary: In situ selective etching of GaAs for improving (Al)GaAs interfaces
using tris-dimethylaminoarsenic
N. Y. Li,a)
Y. M. Hsin, W. G. Bi, P. M. Asbeck, and C. W. Tu
Department of Electrical and Computer Engineering, University of California at San Diego,
La Jolla, California 92093-0407
Received 19 December 1996; accepted for publication 25 February 1997
We have investigated the in situ chemical beam etching CBET process of Al GaAs using
tris-dimethylaminoarsenic TDMAAs within a chemical beam epitaxy chamber. The optimal
CBET condition of Al GaAs is established, according to the analysis of atomic force microscopy,
capacitance­voltage carrier profiles, and current­voltage (I­V) measurements. This CBET process
using TDMAAs is shown to provide a good etching selectivity 20 of GaAs over AlxGa1 xAs
(x 0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown
interface for regrowth applications. Improved I­V characteristics of etched/regrown p-n
AlxGa1 xAs (x 0.35) junctions is also successfully demonstrated when the GaAs cap layer is
preferentially etched first by TDMAAs before regrowth of AlxGa1 xAs. © 1997 American
Institute of Physics. S0003-6951 97 01617-3
Nowdays the most widely used material system of com-
mercial III­V electronic and optoelectronic devices is
AlxGa1 xAs/GaAs. As is well known, aluminum-containing

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering