Summary: phys. stat. sol. (c) 3, No. 6, 1604­1607 (2006) / DOI 10.1002/pssc.200565140
© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Growth of ternary and quaternary cubic III-nitrides
on 3C-SiC substrates
J. Schörmann*
, S. Potthast, M. Schnietz, S. F. Li, D. J. As, and K. Lischka
Department of Physics, University of Paderborn, Warburger Str. 100, 33095 Paderborn, Germany
Received 27 July 2005, revised 27 December 2005, accepted 16 January 2006
Published online 10 May 2006
PACS 61.14.Hg, 61.66.Dk, 68.65.Fg, 81.15.Hi
Cubic GaN, AlxGa1­xN/GaN multiple quantum wells and quaternary AlxGayIn1­x­yN layers were grown by
plasma assisted molecular beam epitaxy on 3C-SiC substrates. Using the intensity of a reflected high en-
ergy electron beam as a probe optimum growth conditions of c-III nitrides were found, when a 1
monolayer Ga coverage is formed at the growing surface. Clear RHEED oscillations during the initial
growth of AlxGa1­xN/GaN quantum wells were observed. X-ray diffraction measurements of these quan-
tum well structures show clear satellite peaks indicating smooth interfaces. Growth of quaternary
AlxGayIn1­x­yN lattice matched to GaN were demonstrated.
© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
1 Introduction
It is well established that group III-nitrides with cubic crystal structure can be grown on substrates with

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics