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Xe interacting with porous silicon Assaf Paldor,a
 

Summary: Xe interacting with porous silicon
Assaf Paldor,a
Gil Toker,a
Yigal Lilachb
and Micha Asscher*a
Received 17th December 2009, Accepted 29th March 2010
First published as an Advance Article on the web 30th April 2010
DOI: 10.1039/b926692e
Thin films of porous silicon (PS), structurally characterized by HR-SEM, were studied using
xenon Temperature Programmed Desorption (TPD) as a probe of its inner pores. Geometric
hindrance of the depth desorbing population and multiple wall collisions result in a unique
double-peak structure of the TPD curve. Surface-diffusion assisted adsorption mechanism into
inner pores at 48 K is proposed as the origin of these unique TPD spectra. It is experimentally
verified by mild Ne+
sputtering prior to TPD which preferentially removes Xe population from
the top surfaces. A pore-diameter limited desorption kinetic model that takes into account
diffusion and pore depth well explains the governing parameters that determine the experimental
observations. These results suggest that TPD may be employed as a highly sensitive, non-
destructive surface area determination tool.
1. Introduction

  

Source: Asscher, Micha - Institute of Chemistry, Hebrew University of Jerusalem

 

Collections: Chemistry