Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation
 

Summary: MOSFET Analytical Inversion Charge Model with Quantum Effects using a
Triangular Potential Well Approximation
H. Abebe*
, E. Cumberbatch**
, V. Tyree*
and H. Morris***
*
University of Southern California, Information Sciences Institute, MOSIS Service, 4676 Admiralty Way,
Marina del Rey, California 90292, USA, abebeh@mosis.org and tyree@mosis.org
**
Claremont Graduate University, School of Mathematical Sciences, Claremont, California 91711, USA,
ellis.cumberbatch@cgu.edu
***
Department of Mathematics, San Jose State University
San Jose, CA 95192, USA, morris@math.sjsu.edu
ABSTRACT
The eigenfunctions from solutions of the Schrödinger
equation for a triangular potential well are the Airy
functions. The triangular potential approximation has been
shown to be a good approximation for the charge density

  

Source: Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

 

Collections: Physics