Summary: WCM 2006
Compact Modeling for Double Gate and
Surround Gate MOSFETs
H. Morris***, H. Abebe*, E. Cumberbatch** and Shigeyasu Uno****
*MOSIS, Information Sciences Institute
Viterbi School of Engineering
University of Southern California
**Claremont Graduate University, School of Mathematical Sciences
***Department of Mathematics, San Jose State University
****School of Engineering , Nagoya University, Nagoya, Japan.
Double and surround gate MOSFETs.
Poisson equation at strong inversion.
Analytical solutions based on Lambert function.
Channel current models of the Double Gate (DG).
Quantum effect correction for the DG current.