Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Compact Modeling for Double Gate and Surround Gate MOSFETs
 

Summary: WCM 2006
Compact Modeling for Double Gate and
Surround Gate MOSFETs
MOSIS
H. Morris***, H. Abebe*, E. Cumberbatch** and Shigeyasu Uno****
*MOSIS, Information Sciences Institute
Viterbi School of Engineering
University of Southern California
**Claremont Graduate University, School of Mathematical Sciences
***Department of Mathematics, San Jose State University
****School of Engineering , Nagoya University, Nagoya, Japan.
2
Topics
Double and surround gate MOSFETs.
Poisson equation at strong inversion.
Boundary conditions.
Analytical solutions based on Lambert function.
Iterative method.
Channel current models of the Double Gate (DG).
Quantum effect correction for the DG current.

  

Source: Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

 

Collections: Physics