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Two-photon passive electro-optic upconversion in a GaAs/AlGaAs heterostructure device

Summary: Two-photon passive electro-optic upconversion in a GaAs/AlGaAs
heterostructure device
Lai Zhao, Pete Thompson, N. N. Faleev, D. W. Prather, and Ian Appelbauma
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716
Received 24 January 2007; accepted 19 February 2007; published online 23 March 2007
A semiconductor heterostructure device that requires no external power source to upconvert two
low-energy photons into one higher-energy photon is proposed. This passive device is fabricated in
the AlGaAs/GaAs material system and it is used to demonstrate photon upconversion from
808 to 710 nm at room temperature. 2007 American Institute of Physics.
DOI: 10.1063/1.2716354
Due to energy conservation, electro-optic devices that
convert low-energy photons into higher-energy photons must
invariably add the energy difference somehow. Other than
nonlinear two-photon processes such as Auger excitation,1
this can be accomplished by increasing the potential energy
of photogenerated charge carriers with an external voltage
bias and inducing recombination in a larger-band-gap semi-
conductor. For example, in internal photoemission
illustrated in Fig. 1 , low-energy photons in-


Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park


Collections: Engineering; Materials Science