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894 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 4, APRIL 2003 Design and Performance of Tunnel Collector HBTs
 

Summary: 894 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 4, APRIL 2003
Design and Performance of Tunnel Collector HBTs
for Microwave Power Amplifiers
Rebecca J. Welty, Member, IEEE, Kazuhiro Mochizuki, Senior Member, IEEE, Charles R. Lutz, Roger E. Welser, and
Peter M. Asbeck, Fellow, IEEE
Abstract--AlGaAs/GaAs/GaAs and GaInP/GaAs/GaAs n-p-n
heterojunction bipolar transistors (HBTs) are now in widespread
use in microwave power amplifiers. In this paper, improved HBT
structures are presented to address issues currently problematic
for these devices: high offset and knee voltages and saturation
charge storage. Reduced HBT offset and knee voltages (
and ) are important to improve the power amplifier efficiency.
Reduced saturation charge storage is desirable to increase
gain under conditions when the transistor saturates (such as in
over-driven Class AB amplifiers and switching mode amplifiers).
It is shown in this paper that HBT structures using a 100--thick
layer of GaInP between the GaAs base, and collector layers are
effective in reducing to 30 mV and measured at a
collector current density of 2 104 A cm2 to 0.3 V (while for
conventional HBTs = 0 2 V and = 0 5 V are

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering