Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 15, NO. 5, OCTOBER 2006 1139 A Gap Reduction and Manufacturing Technique
 

Summary: JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 15, NO. 5, OCTOBER 2006 1139
A Gap Reduction and Manufacturing Technique
for Thick Oxide Mask Layers With Multiple-Size
Sub-m Openings
Reza Abdolvand, Student Member, IEEE, and Farrokh Ayazi, Senior Member, IEEE
Abstract--This paper introduces a technique for the fabrication
of thick oxide hard masks on top of a substrate with adjustable
opening sizes in the sub- m regime, while the only lithography
step involved has m-scale resolution. This thick oxide mask
layer with sub- m openings is suitable for etching deep narrow
trenches in silicon using deep reactive ion etching (DRIE) tools.
Openings of less than 100 nm are realized in a 1.5- m-thick oxide
layer, while the original lithographically defined feature sizes are
larger than 1 m in width. This method, combined with modi-
fied high aspect ratio DRIE recipes, shows a great potential for
single-mask batch-fabrication of high frequency low-impedance
single crystalline resonators on silicon-on-insulator (SOI) sub-
strates. Dry-etched trenches with aspect ratios as high as 60:1 are
fabricated in silicon using the gap reduction technique to realize
200 nm opening sizes in an oxide mask layer. Various resonator

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering