Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Quantifying the order of spontaneous ripple patterns on ion-irradiated Si(111) H. Bola George1
 

Summary: 1
Quantifying the order of spontaneous ripple patterns on ion-irradiated Si(111)
H. Bola George1
, Ari-David Brown2*
, Matthew R. McGrath3
, Jonah Erlebacher2
& Michael J.
Aziz1
1
Division of Engineering & Applied Sciences, Harvard University, Cambridge, MA 02138
2
Department of Materials Science & Engineering, Johns Hopkins University, Baltimore, MD
21218
3
Physics & Astronomy Department, Vanderbilt University, Nashville, TN 37235
* Current address: NASA Goddard Space Flight Center, Greenbelt, MD 20771
ABSTRACT
Uniform keV ion irradiation causes a morphological instability known to result in the
spontaneous formation of topographic ripple and dot patterns. The degree of order of these
patterns, which has important implications for non-lithographic patterning applications, varies

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science