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Summary: 1
Quantifying the order of spontaneous ripple patterns on ion-irradiated Si(111)
H. Bola George1
, Ari-David Brown2*
, Matthew R. McGrath3
, Jonah Erlebacher2
& Michael J.
Aziz1
1
Division of Engineering & Applied Sciences, Harvard University, Cambridge, MA 02138
2
Department of Materials Science & Engineering, Johns Hopkins University, Baltimore, MD
21218
3
Physics & Astronomy Department, Vanderbilt University, Nashville, TN 37235
* Current address: NASA Goddard Space Flight Center, Greenbelt, MD 20771
ABSTRACT
Uniform keV ion irradiation causes a morphological instability known to result in the
spontaneous formation of topographic ripple and dot patterns. The degree of order of these
patterns, which has important implications for non-lithographic patterning applications, varies
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