Summary: * Corresponding author. Tel.: #49-5151-999-304; fax: #49-5151-999-400.
E-mail address: firstname.lastname@example.org (B. Lenkeit).
Current address: Universita` di Roma `La Sapienzaa, Piazzale Aldo Moro, 5, 00125 Roma, Italy.
Solar Energy Materials & Solar Cells 65 (2001) 317}323
Excellent thermal stability of remote plasma-
enhanced chemical vapour deposited silicon
nitride "lms for the rear of screen-printed
bifacial silicon solar cells
B. Lenkeit*, S. Steckemetz, F. Artuso, R. Hezel
Institut fu( r Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany
In this work the thermal stability of the electronic surface passivation of remote plasma-
enhanced chemical vapour deposited (RPECVD) silicon nitride (SiN) "lms is investigated with
the aim to establish a cost-e!ective screen-printing and "ring-through-the-SiN process for
bifacial silicon (Si) solar cells. As a key result, RPECVD SiN "lms provide an excellently
thermally stable surface passivation quality if they feature a refractive index in the range
between 2.0 and 2.2. After a short anneal above 8503C the surface recombination velocity on
1.5 cm p-type #oat-zone (FZ) Si remains at a very low level of about 20 cm/s. First bifacial
silicon solar cells with screen-printed rear contacts on 1.5 cm p-type FZ Si yield a very
promising rear e$ciency of 13.4%. 2001 Elsevier Science B.V. All rights reserved.