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Z .Applied Surface Science 130132 1998 694703 Electron emission properties of crystalline diamond and III-nitride
 

Summary: Z .Applied Surface Science 130­132 1998 694­703
Electron emission properties of crystalline diamond and III-nitride
surfaces
R.J. Nemanich )
, P.K. Baumann, M.C. Benjamin, O.-H. Nam, A.T. Sowers,
B.L. Ward, H. Ade, R.F. Davis
Department of Physics and Department of Materials Science and Engineering, North Carolina State UniÕersity, Raleigh, NC 27695-8202,
USA
Received 28 October 1997; accepted 20 December 1997
Abstract
Z .Wide bandgap semiconductors have the possibility of exhibiting a negative electron affinity NEA meaning that
electrons in the conduction band are not bound by the surface. The surface conditions are shown to be of critical importance
in obtaining a negative electron affinity. UV-photoelectron spectroscopy can be used to distinguish and explore the effect.
Surface terminations of molecular adsorbates and metals are shown to induce an NEA on diamond. Furthermore, a NEA has
been established for epitaxial AlN and AlGaN on 6H­SiC. Field emission measurements from flat surfaces of p-type
diamond and AlN are similar, but it is shown that the mechanisms may be quite different. The measurements support the
recent suggestions that field emission from p-type diamond originates from the valence band while for AlN on SiC, the field
Zemission results indicate emission from the AlN conduction band. We also report PEEM photo-electron emission
. Z .microscopy and FEEM field electron emission microscopy images of an array of nitride emitters. q 1998 Elsevier Science
B.V. All rights reserved.

  

Source: Ade, Harald W.- Department of Physics, North Carolina State University

 

Collections: Physics