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VERTICAL CAPACITIVE SIBARS Siavash Pourkamali, Gavin K. Ho, and Farrokh Ayazi
 

Summary: VERTICAL CAPACITIVE SIBARS
Siavash Pourkamali, Gavin K. Ho, and Farrokh Ayazi
School of Electrical and Computer Engineering
Georgia Institute of Technology, Atlanta, GA 30332-0250
ABSTRACT
This work introduces high frequency, vertical silicon
bulk acoustic resonators (SiBAR). A combination of the
new resonator structures with much larger transduction area
and the HARPSS fabrication process is used to demonstrate
high frequency capacitive resonators with significantly
lower impedances compared to the previous capacitive
resonators. Impedances as low as a few kilo-Ohms and
quality factors in the range of 20,000 to 50,000 in the VHF
range have been achieved for the first thickness mode of the
fabricated resonators. Resonant frequencies as high as
983MHz are demonstrated for the third thickness modes of
the capacitive SiBARs.
I. INTRODUCTION
High frequency mechanical resonators such as surface
acoustic wave (SAW) [1] and film bulk acoustic wave

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering