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Activation volume for phosphorus diffusion in silicon and Si0.93Ge0.07 Yuechao Zhao and Michael J. Aziza
 

Summary: Activation volume for phosphorus diffusion in silicon and Si0.93Ge0.07
Yuechao Zhao and Michael J. Aziza
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Nikolaj R. Zangenbergb
and Arne Nylandsted Larsen
Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
Received 5 October 2004; accepted 15 February 2005; published online 30 March 2005
The hydrostatic pressure dependence of the diffusivity of P in compressively strained Si0.93Ge0.07
and unalloyed Si has been measured. In both cases the diffusivity is almost independent of pressure,
characterized by an activation volume V*
of +0.090.11 times the atomic volume for the
unalloyed Si, and +0.010.06 for Si0.93Ge0.07. The results are used in conjunction with the
reported effect of biaxial strain on diffusion normal to the surface to test the prediction for an
interstitialcy-based mechanism of Aziz's phenomenological thermodynamic treatment of diffusion
under uniform nonhydrostatic stress states. The prediction agrees well with measured behavior,
lending additional credence to the interstitial-based mechanism and supporting the nonhydrostatic
thermodynamic treatment. 2005 American Institute of Physics. DOI: 10.1063/1.1896445
Because understanding and controlling diffusion related
phenomena become increasingly important as semiconductor
device dimensions decrease, diffusion in Si has been heavily

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science