Summary: One and Two-Dimensional Pattern Formation on Ion Sputtered Silicon
Ari-David Brown1,2
, H. Bola George3
, Michael J. Aziz3
, and Jonah Erlebacher2
1
Department of Physics and Astronomy, Johns Hopkins University,
Baltimore, MD 21218, U.S.A.
2
Department of Materials Science and Engineering, Johns Hopkins University,
Baltimore, MD 21218, U.S.A.
3
Division of Engineering and Applied Sciences, Harvard University,
Cambridge, MA 02138, U.S.A.
ABSTRACT
The evolution of surface morphology during ion beam erosion of Si(111) at glancing ion
incidence (60o
from normal, 500 eV Ar+
, 0.75 mA/cm2
collimated beam current) was

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

Collections: Physics; Materials Science