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Summary: (a)
(b)
Figure 1. Schematic diagram of a carbon nanotube transistor:
(a) cross section view; (b) top view [3].
A New SRAM Cell Design Using CNTFETs
Sheng Lin, Yong-Bin Kim and Fabrizio Lombardi Young Jun Lee
Department of Electrical and Computer Engineering NextChip Corp.
Northeastern University Seoul, Korea
Boston, MA, USA
{slin, ybk, lombardi}@ece.neu.edu yjlee@nextchip.com
Abstract--As CMOS devices scales to the nano ranges,
increased short channel effects and process variations
considerably affect device and circuit designs. Novel devices
are been proposed to address these problems. As a
promising new transistor, the Carbon Nanotube Field Effect
Transistor (CNTFET) avoids most of the fundamental
limitations of the traditional CMOS devices. In this paper,
the MOSFET-like CNTFET is reviewed and shown as a
promising device for high-performance and low-power
memory designs. A 6T SRAM cell based on CNTFET is
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