Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
664 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 5, NO. 3, MAY/JUNE 1999 Ion-Implanted GaAsInGaAs Lateral
 

Summary: 664 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 5, NO. 3, MAY/JUNE 1999
Ion-Implanted GaAs­InGaAs Lateral
Current Injection Laser
A. A. Tager, R. Gaska, I. A. Avrutsky, M. Fay, H. Chik, A. SpringThorpe, S. Eicher, J. M. Xu, and M. Shur
Abstract-- We have fabricated and characterized lateral
current injection (LCI) ridge-waveguide lasers formed by
ion-implanted injectors. Comprehensive optical and electrical
measurements have been performed over a wide temperature
range (10 K­300 K) on two sets of lasers with differing ridge
widths and active region structures. Several new phenomena
unique to the LCI mechanism have been observed, including
a positive differential resistance kink at threshold, and inverse
temperature-dependencies of quantum efficiency and threshold
current at cryogenic temperatures. Electron­hole mobility
disparity, local carrier nonpinning above threshold due to
photon-assisted ambipolar diffusion, and intrinsically higher
current densities have been identified as the major factors
governing these LCI laser characteristics. The results have
important implications for future LCI laser design and ultimate
performance.

  

Source: Avrutsky, Ivan - Department of Electrical and Computer Engineering, Wayne State University

 

Collections: Engineering