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Straightening Suspended Single Walled Carbon Nanotubes by Ion Irradiation

Summary: Straightening Suspended Single Walled
Carbon Nanotubes by Ion Irradiation
Yung Joon Jung, Yoshikazu Homma,*, Robert Vajtai, Yoshihiro Kobayashi,
Toshio Ogino, and Pulickel M. Ajayan*,
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute,
Troy, New York 12180-3590, NTT Basic Research Laboratories, Atsugi, Kanagawa,
243-0198, Japan, and Department of Electrical and Computer Engineering,
Yokohama National UniVersity, Yokohama, Japan
Received March 22, 2004; Revised Manuscript Received April 12, 2004
Single walled carbon nanotubes grown suspended between pillars of Si/SiO2 structures are straightened by ion beam scans. In addition, the
ion irradiation selectively removes nanotubes lying on the substrate, leaving the suspended nanotubes in place. This strategy provides a
facile way to produce large area connected networks of suspended straight nanotubes. Although ion irradiation induces structural modifications
to nanotubes and introduces defects into the nanotube lattice, the form and dimensions of the nanotubes remain close to that of original
grown structures. Nanotube networks consisting of perfectly straight and suspended structures could serve as a platform for various applications.
Recent progress in the controlled growth of carbon nanotubes
allows the growth of large area networks of interconnected
single walled nanotubes.1-4
This is accomplished by chemical
vapor deposition (CVD) of methane gas over catalyst coated


Source: Ajayan, Pulickel M. - Department of Mechanical Engineering and Materials Science, Rice University


Collections: Materials Science