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Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se semiconductor microcavity structure
 

Summary: Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se
semiconductor microcavity structure
A. Pawlis*, A. Khartchenko, O. Husberg, D.J. As, K. Lischka, D. Schikora
Department of Physics, University of Paderborn, Warburger Straße 100, D-33098 Paderborn, Germany
Received 5 June 2002; received in revised form 10 June 2002; accepted 10 June 2002 by M. Cardona
Abstract
Due to their large oscillator strength ZnSe microcavities with (Zn,Cd)Se quantum wells are particularly suited to investigate
the photon­exciton coupling behavior in semiconductors. We have observed a strong coupling between the excitonic and
photonic mode in a ZnSe microcavity with four (Zn,Cd)Se quantum wells and distributed Bragg-mirrors of ZnS and YF3. A
very large Rabi-splitting V . 40 meV was observed at T ¼ 300 K in reflection measurements as well as in photoluminescence
investigations. q 2002 Elsevier Science Ltd. All rights reserved.
PACS: 71.36. þ c; 71.55.Gs; 71.35. 2 y
Keywords: A. Polaritons; D. Microcavity; E. Rabi-splitting
1. Introduction
Semiconductor quantum wells as part of microcavities
allow the study of the interconversion between excitons and
photons, which in the strong-coupling regime is manifested
as a Rabi-splitting into two resonance features of the optical
spectrum.
The coupling between excitons and photons generate

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics