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Summary: POLY-SIGE: A HIGH-Q STRUCTURAL MATERIAL FOR INTEGRATED RF MEMS
Sunil A. Bhave1
, Brian L. Bircumshaw2
, Wing Zin Low1
, Yong-Sang Kim1,
, Albert P. Pisano2,1
,
Tsu-Jae King1
, and Roger T. Howe1,2
Department of Electrical Engineering & Computer Sciences1
and Department of Mechanical Engineering2
Berkeley Sensor & Actuator Center, 497 Cory Hall, University of California, Berkeley, CA 94720-1774
Current address: Department of Electrical Engineering, Myongji University, Kyongki, Korea.
Travel support has been generously provided by the Transducers Research Foundation and by the DARPA MEMS and DARPA BioFlips programs.
ABSTRACT
This paper presents new material data for single- and multi-
layer CMOS compatible poly-SiGe films, including mechanical
quality factor (Q), Young's modulus, and strain gradient. Using
audio frequency folded-flexure comb-drive resonators, the
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