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Summary: VOLTAGE-TUNABLE PIEZOELECTRICALLY-TRANSDUCED SINGLE-CRYSTAL
SILICON RESONATORS ON SOI SUBSTRATE
Gianluca Piazza, Reza Abdolvand, and Farrokh Ayazi
School of Electrical and Computer Engineering
Georgia Institute of Technology, Atlanta, GA 30332-0250, USA
Email: ayazi@ece.gatech.edu; Tel: 1-404-894-9496; Fax: 1-404-894-4700
ABSTRACT
This paper reports on a new class of high-Q single
crystal silicon (SCS) resonators that are piezoelectrically
actuated and sensed, and have voltage-tunable center
frequencies. The resonating element is made out of the SCS
device layer of a SOI wafer. In a unique manner,
piezoelectric transduction was integrated with capacitive
fine-tuning of the resonator center frequencies to
compensate for any process variations. A quality factor of
6,200 was measured for the 1.7MHz 1st
resonance mode of a
clamped-clamped beam resonator in 50mTorr vacuum. A
200µm long, 4.2µm thick beam was operated in its higher
order modes and demonstrated a Q of 5,300, 3,000, and
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