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Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
 

Summary: Measurement of piezoelectrically induced charge in GaN/AlGaN
heterostructure field-effect transistors
E. T. Yua)
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,
California 92093-0407
G. J. Sullivan
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, California 91358
P. M. Asbeck, C. D. Wang,b)
D. Qiao, and S. S. Lau
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,
California 92093-0407
Received 8 July 1997; accepted for publication 12 September 1997
Electron concentration profiles have been obtained for AlxGa1 xN/GaN heterostructure field-effect
transistor structures. Analysis of the measured electron distributions demonstrates the influence of
piezoelectric effects in coherently strained layers on III-V nitride heterostructure device
characteristics. Characterization of a nominally undoped Al0.15Ga0.85N/GaN transistor structure
reveals the presence of a high sheet carrier density in the GaN channel which may be explained as
a consequence of piezoelectrically induced charges present at the Al0.15Ga0.85N/GaN interface.
Measurements performed on an Al0.15Ga0.85N/GaN transistor structure with a buried Al0.15Ga0.85N
isolation layer indicate a reduction in electron sheet concentration in the transistor channel and

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering