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Investigation of the Thermal Decomposition of Triethylgallium Using in situ Raman Spectroscopy and DFT Calculations
 

Summary: Investigation of the Thermal Decomposition of Triethylgallium Using in situ Raman
Spectroscopy and DFT Calculations
Jooyoung Lee, Young Seok Kim and Tim Anderson
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
Pathways for homogeneous thermal decomposition of (C2H5)3Ga
(TEGa) were followed using in situ Raman spectroscopy
measurements in an up-flow, cold-wall CVD reactor. The results
of Density Functional Theory (DFT) calculations were used to
assign measured Raman bands to the decomposition products
(Et)3Ga, (DEGa)2, (Et)GaH­Ga(Et)2 and (Et)GaH­GaH2. The
results of this study are consistent with both ­hydride elimination
and homolysis pathways active. DFT calculations using the
B3LYP/LanL2DZ model chemistry were also performed to screen
possible routes and estimate their reaction rate parameters.
Introduction
Gallium-based compound semiconductors have played an important role in many
electronic and optoelectronic devices, and MOCVD is often the preferred method of film
deposition. Although several Ga precursors have been explored, TEGa ((C2H5)3Ga,
Triethylgallium) and TMGa ((CH3)3Ga, Trimethylgallium) are most commonly used as
Ga sources for MOCVD of Ga-V compound semiconductors (1-3). The limited reports

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science