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Recent developments on non-polar cubic group III-nitrides for optoelectronic applications
 

Summary: Recent developments on non-polar cubic group III-nitrides for
optoelectronic applications
D.J. As*
University of Paderborn, Warburger Strasse 100, 33098 Paderborn, Germany;
ABSTRACT
Molecular Beam epitaxy (MBE) of cubic group III-nitrides is a direct way to eliminate polarization effects which
inherently limit the performance of optoelectronic devices containing quantum well or quantum dot active regions. In
this contribution the latest achievement in the MBE of phase-pure cubic GaN, InN, AlN and their alloys will be
reviewed. A new RHEED control technique enables to carefully adjust stoichiometry and to severely reduce the surface
roughness, which is important for any hetero-interface. The structural, optical and electrical properties of cubic nitrides
and AlGaN/GaN will be presented. We show that no polarization field exists in cubic nitrides and demonstrate
intersubband absorption at 1.55 µm in cubic AlN/GaN superlattices. Further the progress towards the fabrication of cubic
GaN/AlGaN superlattices for terahertz applications will be discussed.
Keywords: cubic group III-nitrides, MBE, HRXRD, intersubband transitions, QWIPs
1. INTRODUCTION
Commercially available group III-nitride-based optoelectronic devices are grown along the polar c direction, which
suffer from the existence of strong "built-in" piezoelectric and spontaneous polarization. This inherent polarization limits
the performance of optoelectronic devices containing quantum well or quantum dot active regions. To get rid of this
problem much attention has been focused on the growth of non- or semi-polar (Al,Ga,In)N. However, a direct way to
eliminate polarization effects is the growth of cubic (100) oriented III-nitride layers. With cubic epilayers a direct

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics