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Ultrafast relaxation of hot minority carriers in p-GaAs A. M. Alencar, A. J. C. Sampaio, and V. N. Freirea)
 

Summary: Ultrafast relaxation of hot minority carriers in p-GaAs
A. M. Alencar, A. J. C. Sampaio, and V. N. Freirea)
Departamento de Fisica, Universidade Federal do Cear&, C.P. 6030 60451-970 Fortaleza, Cearri, Brazil
J. Alzamir P. da Costa
Departamento de Fisica, Universidade FederaI do Rio Grande do Norte, 59072 Natal,
Rio Grande do Norte, Brazil
(Received 22 March 1993; accepted for publication 20 April 1993)
The dynamics of hot minority carriers in p-GaAs is calculated for doping concentrations in the
range of 1.5X 1017 cmw3 to 1.5X 1018 cm-3. It is shown that the electron-hole interaction
increases the rate of dissipation of the excess energy of the minority carriers in the early stages
of the process. However, this channel for energy dissipation becomes weaker as the cooling of
the minority carriers proceeds, an effect more noticeable in the case of high doping levels. When
the electron-hole interaction is disregarded, the dissipation rate is always smaller for low doping
concentrations.
Considerable insight into the scattering mechanisms
determining the physical properties of intrinsic semicon-
ductors is obtained with the study of the ultrafast relax-
ation of hot carriem.`-3 Technical advancements in this
field were so'successful that nowadays it is possible to in-
vestigate relaxation processes in photoexcited carriers in a

  

Source: Alencar, Adriano Mesquita - Departamento de Física Geral, Universidade de São Paulo

 

Collections: Physics