Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
International Journal of High Speed Electronics and Systems l M ^ m u x-*. Vol. 14, No. 3 (2004) 831-836 V P ^orld Scientific
 

Summary: International Journal of High Speed Electronics and Systems l M ^ m u x-*.
Vol. 14, No. 3 (2004) 831-836 V P ^orld Scientific
^ ,, , , ,, \ ^ r^ , , . rt W B WWW,world5CiBnlitic.com
World Scientific Publishing Company
ANALYSIS OF GaN HBT STRUCTURES FOR HIGH POWER, HIGH
EFFICIENCY MICROWAVE AMPLIFIERS
D.M. KEOGH, J.C. LI, A.M. CONWAY. D. QIAO,
S. RAYCHAUDHURl, and P.M. ASBECK
University of California at San Diego. La Jolla. CA 92037-0407. USA
R.D. DUPUIS
Georgia Institute of Technology, Atlanta, GA 30332, USA
M. FENG
University of Illinois at Urbana-Champaign, Urbana, Illinois 6I80I. USA
GaN has become increasingly important for microwave applications up to K, band as a result of its
wide band-gap, which provides a high critical breakdown field and good thermal slabilily, yielding
excellent potential for high power aid high voltage operation. It is of major interest to understand
the device structures that will lead to high efficiency, high power microwave amplifiers. In ihis
paper, we investigate by simulation the microwave performance of InGaN/GaN Heterojunction
Bipolar Transistors {HBTs), wilh proper device geometry to account for ihe effects of current
crowding. We provide an analysis of both emitter-up and col!ector-up InGaN/GaN HBT structures,

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering