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Summary: MICROWAVE PERFORMANCE OF OPTICALLY CONTROLLEDMESFETS
M. A. Alsunaidi and M.A. AI-Absi
King Fahd Universityof Petroleum and Minerals
Department of electricalEngineering
P.O. Box 200, Dhahran 31261, Saudi Arabia
Tet 03-860-2277Fax:03-860-3535
E-m i l msunaidi@kfupm.edu.sa
Abstract This paper presents the characterization
of illuminated high-frequency activedevices using a time -
domain physical simulationmodel. The model is based on
Boltztnann's Transport Equation (BTE), which accurately
accounts for carrier transport in microwave and millimeter
wave devices with sub-micrometer gate lengths.
Illumination effects are accommodated in the model to
represent camer density changes inside the illuminated
device. The simulation results are compared to available
experimental records for a typical MESFET for validation
purposes. The calculated y-parameters of the device show
the profound effect of illumination on the microwave
characteristics. These findmgs make the model an
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