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Lateral templating of self-organized ripple morphologies during focused ion beam milling of Ge
 

Summary: Lateral templating of self-organized ripple morphologies during focused
ion beam milling of Ge
Stefan Ichim and Michael J. Aziz
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Received 28 May 2004; accepted 22 February 2005; published 2 June 2005
We report the use of the boundary between ion irradiated and unirradiated regions to template the
lateral self-organization of nanoscale ripplelike morphological features that spontaneously evolve
during uniform ion irradiation. Using uniform rastering of a 30 keV Ga+
focused ion beam, up to
eight periods of ripples have been templated to follow the boundary under the set of conditions
explored. We report the dependence of the range of lateral templating on incident angle, ion dose,
and boundary inclination with respect to the projected ion beam direction. We show that the ripple
organization is influenced by a down-step as well as by an up-step in the surface morphology.
2005 American Vacuum Society. DOI: 10.1116/1.1897711
Because the future of nanotechnology ultimately rests on
the controllable and cost-effective fabrication, integration,
and mass production of nanoscale structures, various fabri-
cation and assembly techniques are being investigated. Pho-
tolithography permits excellent throughput and morphology
control but is approaching fundamental limitations to the fur-

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science