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CONTRIBUTED Modeling of Nanoscale Devices
 

Summary: CONTRIBUTED
P A P E R
Modeling of Nanoscale Devices
Devices and components subject to quantum and atomistic effects, such as
layered semiconductor structures, nanoscale transistors, carbon nanotubes and
nanowires may be modeled using quantum analysis and simulation methods.
By M. P. Anantram, Mark S. Lundstrom, Fellow IEEE, and
Dmitri E. Nikonov, Senior Member IEEE
ABSTRACT | We aim to provide engineers with an introduction
to the nonequilibrium Green's function (NEGF) approach, which
is a powerful conceptual tool and a practical analysis method to
treat nanoscale electronic devices with quantum mechanical
and atomistic effects. We first review the basis for the
traditional, semiclassical description of carriers that has served
device engineers for more than 50 years. We then describe why
this traditional approach loses validity at the nanoscale. Next,
we describe semiclassical ballistic transport and the Landauer­
Buttiker approach to phase-coherent quantum transport.
Realistic devices include interactions that break quantum
mechanical phase and also cause energy relaxation. As a

  

Source: Anantram, M. P. - Department of Electrical Engineering, University of Washington at Seattle

 

Collections: Materials Science; Computer Technologies and Information Sciences