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Computer Methods in Applied Mechanics and Engineering 107 (1993) 269-298 North-Holland
 

Summary: Computer Methods in Applied Mechanics and Engineering 107 (1993) 269-298
North-Holland
CMA 400
A finite element formulation for the
hydrodynamic semiconductor device equations
N.R. Aluru a A. Raefsky b P.M. Pinsky ~, K.H. Law a, R.J.G. Goossens b and
R.W. Duttonb
~Department of Civil Engineering, Stanford University, Stanford, CA 94305, USA
bDepartment of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
Received 21 September 1992
A new formulation employing the Galerkin/least-squares finite element method is presented for the
simulation of the hydrodynamic model of semiconductor devices. Numerical simulations are performed
on the coupled Poisson and hydrodynamic equations for one carrier devices. The hydrodynamic
equations for a single carrier, i.e. for the electrons or holes, resemble the compressible Navier-Stokes
equations with the addition of highly nonlinear source terms and without the viscous terms. The
governing equations are nondimensionalized to improve the conditioning on the resulting system of
equations and the efficiency of the numerical algorithms. Furthermore, to establish the stability of the
discrete solution, the system of hydrodynamic equations is symmetrized by considering generalized
entropy functions. A staggered solution strategy is employed to treat the coupled hydrodynamic and
Poisson equations. Numerical results are presented for one-dimensional and two-dimensional one-

  

Source: Aluru, Narayana R. - Department of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign

 

Collections: Engineering; Materials Science