Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope
 

Summary: Room-temperature ballistic electron emission luminescence spectroscopy
with a scanning tunneling microscope
Ian Appelbaum,a)
K. J. Russell, M. Kozhevnikov, and V. Narayanamurti
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138
M. P. Hanson and A. C. Gossard
Materials Department, University of California, Santa Barbara, California 93106
Received 8 August 2003; accepted 29 November 2003
We present a luminescence spectroscopy for semiconductor heterostructures based on local hot
electron injection from a scanning tunneling microscope tip. In addition to a tip voltage bias
exceeding the metal-semiconductor Schottky barrier height, this process requires a collector bias
voltage to satisfy energy conservation. These results indicate that this method could be used to study
local electron transport and simultaneous electroluminescence in buried luminescent layers at depths
greater than the ballistic electron mean free path in the collector. 2004 American Institute of
Physics. DOI: 10.1063/1.1644329
Since their invention in 1988, ballistic electron emission
microscopy BEEM and its associated spectroscopy
BEES 1
have been widely used to study metal-
semiconductor interfaces and buried heterostructures.26

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science