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SUB-MICRO-GRAVITY CAPACITIVE SOI MICROACCELEROMETERS B. Vakili Amini, R. Abdolvand, and F. Ayazi
 

Summary: SUB-MICRO-GRAVITY CAPACITIVE SOI MICROACCELEROMETERS
B. Vakili Amini, R. Abdolvand, and F. Ayazi
Integrated MEMS laboratory
Georgia Institute of Technology, Atlanta, GA 30332-0250
Email: vakilia@ece.gatech.edu; Tel: (404) 385-6693; Fax: (404) 385-6650
ABSTRACT
The implementation and preliminary characterization of
a new in-plane capacitive microaccelerometer with sub-
micro-gravity resolution (<200ng/Hz) and very high
sensitivity (>15pF/g) is presented. The accelerometers are
fabricated in thick (>100Ám) silicon-on-insulator (SOI)
substrates using a 2-mask fully-dry-release process that
provides large seismic mass (>10milli-g), reduced
capacitive gaps, and reduced in-plane stiffness. The
fabricated devices were interfaced to a high resolution
switched-capacitor CMOS IC that eliminates the need for
area-consuming reference capacitors. The measured
sensitivity is 83mV/mg (17pF/g) and the output noise floor
is -91dBm/Hz at 10Hz (corresponding to an acceleration
resolution of 170ng/Hz). The IC consumes 6mW power

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering