Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Reverse Schottky-asymmetry spin current detectors and Ian Appelbaumb
 

Summary: Reverse Schottky-asymmetry spin current detectors
Yuan Lua
and Ian Appelbaumb
Department of Physics, Center for Nanophysics and Advanced Materials, University of Maryland, College
Park, Maryland 20742, USA
Received 22 September 2010; accepted 30 September 2010; published online 18 October 2010
By reversing the Schottky barrier-height asymmetry in hot-electron
semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved the
following: 1 demonstration of 50% spin polarization in silicon, resulting from the increase of
detection efficiency by elimination of the ferromagnet/silicon interface on the transport channel
detector contact and 2 evidence of spin transport at temperatures as high as 260 K, enabled by an
increase in detector Schottky barrier height. 2010 American Institute of Physics.
doi:10.1063/1.3504659
Measurement of spin transport in semiconductors has
been achieved by detecting either spin-accumulation
density 14
or spin current. The latter configuration has been
achieved in silicon Si devices by exploiting the mean-free-
path mfp asymmetry between spin-up and spin-down hot
electrons in ferromagnetic FM thin films as follows: elec-

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science