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Reverse Schottky-asymmetry spin current detectors and Ian Appelbaumb

Summary: Reverse Schottky-asymmetry spin current detectors
Yuan Lua
and Ian Appelbaumb
Department of Physics, Center for Nanophysics and Advanced Materials, University of Maryland, College
Park, Maryland 20742, USA
Received 22 September 2010; accepted 30 September 2010; published online 18 October 2010
By reversing the Schottky barrier-height asymmetry in hot-electron
semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved the
following: 1 demonstration of 50% spin polarization in silicon, resulting from the increase of
detection efficiency by elimination of the ferromagnet/silicon interface on the transport channel
detector contact and 2 evidence of spin transport at temperatures as high as 260 K, enabled by an
increase in detector Schottky barrier height. 2010 American Institute of Physics.
Measurement of spin transport in semiconductors has
been achieved by detecting either spin-accumulation
density 14
or spin current. The latter configuration has been
achieved in silicon Si devices by exploiting the mean-free-
path mfp asymmetry between spin-up and spin-down hot
electrons in ferromagnetic FM thin films as follows: elec-


Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park


Collections: Engineering; Materials Science