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INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF MICROMECHANICS AND MICROENGINEERING J. Micromech. Microeng. 15 (2005) 21132120 doi:10.1088/0960-1317/15/11/017
 

Summary: INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF MICROMECHANICS AND MICROENGINEERING
J. Micromech. Microeng. 15 (2005) 21132120 doi:10.1088/0960-1317/15/11/017
Micro-gravity capacitive
silicon-on-insulator accelerometers
Babak Vakili Amini and Farrokh Ayazi
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,
GA, USA
Received 11 July 2005, in final form 17 August 2005
Published 23 September 2005
Online at stacks.iop.org/JMM/15/2113
Abstract
In this paper, the implementation and characterization of high-sensitivity
in-plane capacitive micro-gravity silicon-on-insulator (SOI) accelerometers
with the readout circuitry are presented. The devices were implemented in
50 m thick SOI substrates using a two-mask dry-release process. The
fabricated accelerometers were interfaced to a low-noise low-power
reference-capacitor-less switched-capacitor circuit. The integrated circuit
(IC) was implemented in a 2.5 V 0.25 N-well CMOS process. The measured
capacitive sensitivity is 0.3 pF g-1
, equivalent to a gain of 0.75 V g-1

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering