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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 8, AUGUST 1999 1433 Application of GaInP/GaAs DHBT's to Power
 

Summary: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 8, AUGUST 1999 1433
Application of GaInP/GaAs DHBT's to Power
Amplifiers for Wireless Communications
Pin-Fan Chen, Student Member, IEEE, Yue-ming Tony Hsin, Member, IEEE, Rebecca J. Welty, Student Member, IEEE,
Peter M. Asbeck, Senior Member, IEEE, Richard L. Pierson, Peter J. Zampardi, W.-J. Ho, Member, IEEE,
M. C. Vincent Ho, Member, IEEE, and M. Frank Chang, Fellow, IEEE
Abstract-- Next-generation power amplifiers must operate at
lower supply voltages without sacrificing linearity or efficiency.
GaInP/GaAs double-heterojunction bipolar transistors with
GaInP collectors can improve over GaAs single-heterojunction
bipolar transistors (HBT's) in power-amplifier applications,
based on lower offset voltage, increased breakdown electric field,
and absence of saturation charge storage. To best exploit these
characteristics, amplifier architectures that employ HBT's in
switching mode can be used.
I. INTRODUCTION
POWER amplifiers are critical elements in mobile wireless-
communication systems since they account for a large
fraction of the overall energy dissipation. There is a strong
need to improve amplifier efficiency while maintaining linear-

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering